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IRGP4066D Insulated Gate Bipolar Transistor (IGBT) 600V 140A
SKU: IGB-0001-C01
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Availability: In Stock (8 on hand)
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Short Description
Description:
The IRGP4066D is a high-performance insulated gate bipolar transistor (IGBT) with an integrated ultrafast soft recovery diode and sophisticated trench technology.
With a collector-emitter voltage rating of 600V and a collector current capability of up to 140A at 25°C, this efficient and dependable device is appropriate for demanding industrial and power conversion applications.
The IRGP4066D guarantees exceptional energy efficiency and transient performance with its low switching losses, robust short-circuit capabilities (up to 5 µs), and saturation voltage of 1.7 V.
Reliable functioning in high-stress situations is made possible by its wide operating junction temperatures of up to 175°C and sturdy housing.
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Specifications:
Device Type: Insulated Gate Bipolar Transistor (IGBT), N-channel.
Collector-to-Emitter Voltage: 600V.
Continuous Collector Current: 140A.
Continuous Collector Current: 90A.
Nominal Current: 75A.
Maximum Power Dissipation at 25°C: 454W.
Maximum Power Dissipation at 100°C: 227W.
Operating Junction and Storage temperature: -55 to +175°C.
Housing: TO-247.