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75N60HD Insulated Gate Bipolar Transistor (IGBT) 600V 75 - 100A
SKU: IGB-0001-C12
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Short Description
Description:
A high-efficiency N-channel device designed for dependable power switching in commercial and industrial applications is the 75N60HD Insulated Gate Bipolar Transistor (IGBT).
It offers reliable performance in difficult situations with a collector-emitter voltage rating of 600V and a collector current capacity of up to 100A at 25°C (75A continuous at higher working temperatures).
The device minimizes conduction and switching losses by combining a quick switching speed with a low saturation voltage, all housed in a sturdy TO-247 chassis.
It is perfect for use in motor drives, inverters, UPS systems, and high-frequency power supplies because of its broad operating junction temperature range (up to 175°C), which guarantees dependable operation under thermal stress.
The 75N60HD provides a reliable option for contemporary power electronics design by striking a balance between durability, efficiency, and adaptability.
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Specifications:
Device Type: Insulated Gate Bipolar Transistor (IGBT), N-channel.
Collector-Emitter Voltage: 600 V.
Collector Current: Up to 100 A at 25 °C, 75 A continuous at higher operating temperatures.
Gate-Emitter Voltage: ±20 V.
Package: TO-247.
Operating Junction Temperature: Up to 175 °C.
Switching Speed: Fast switching, optimized for high-frequency applications.
Applications: Motor drives, industrial inverters, UPS systems, and high-frequency power supplies.