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G60N65 Insulated Gate Bipolar Transistor (IGBT) 650V 60A
SKU: IGB-0002-C12
Sold by Select Automation
Final price R 83.38
R 72.50 excl. VAT
Availability: In Stock (2 on hand)
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Short Description
Description:
Low conduction and switching losses are provided by the G60N65, a high-performance Insulated Gate Bipolar Transistor (IGBT) constructed with cutting-edge field-stop technology.
It is ideal for medium-to-high-power switching applications such solar inverters, UPS systems, SMPS, welding equipment, and power factor correction circuits.
It is rated for a collector-emitter voltage of 650V and a collector current of 60A.
With a saturation voltage of 1.9V, fast switching capability, and a positive temperature coefficient for easy parallel operation, the G60N65 ensures efficient energy handling and reliable performance under demanding conditions.
With a maximum junction temperature of 175°C and a sturdy TO-3P housing, it is appropriate for demanding industrial settings.
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Specifications:
Device Type: N-channel IGBT, Field-Stop technology.
Collector-Emitter Voltage: 650 V.
Collector Current: 60 A.
Gate-Emitter Voltage: ±20 V (±30 V transient).
Saturation Voltage: ~1.9 V (at 60 A).
Switching Energy: ~7.5 mJ/A (fast switching).
Maximum Junction Temperature: 175 °C.
Package: TO-3P (isolated case).
Applications: Solar inverters, UPS, SMPS, welders, PFC circuits.