HY53C256LS-10 Fast Page Drams PDIP16

Description: The HY53C256LS-10 is a Fast Page Mode Dynamic Random Access Memory (DRAM) chip. Memory Configuration: This DRAM is arranged as 256K words by 1 bit, making it ideal for use in applications that require dense memory arrays. Access Time: The chip has a maximum access time of 100 nanoseconds, allowing for faster read and write operations than its competitors. The HY53C256LS-10 comes in a 16-pin Plastic Dual In-line Package (PDIP), making it simple to install and connect to a circuit board. The supply voltage is commonly 5V, with an acceptable range of 4.5V to 5.5V. Operating Temperature: Designed for commercial use, it performs efficiently at temperatures ranging from 0°C to 70°C. Refresh Modes: This chip offers a variety of refresh modes, including RAS Only Refresh, CAS Before RAS Refresh, and Hidden Refresh, assuring data integrity while reducing power consumption. Built using CMOS (Complementary Metal-Oxide-Semiconductor) technology, this DRAM chip uses less power and has better noise immunity than earlier technologies. This DRAM chip, along with others of its sort, was frequently employed in earlier computer systems and other electronics that required small and reliable memory storage solutions.