TMS4164-15NL DYNAMIC RAM PAGE MODE 64K 16 PIN

Description: Texas Instruments designed the TMS4164-15NL Dynamic Random Access Memory (DRAM) device. It has a storage capacity of 64K x 1 (64,536 bits) and runs in Page Mode, which allows for quick memory access. Memory capacity is 64K x 1 (65,536 bits). Page Mode Operation improves access efficiency by allowing several data bits to be fetched in fewer cycles. Access time is 150 nanoseconds, which ensures quick data retrieval. Supply Voltage: Operates between 4.5V and 5.5V. Technology: Built with NMOS technology for dependable performance. Refresh Requirements: There is a 256-cycle refresh period to ensure data integrity. Packaging: Standard 16-pin Dual In-Line Package (DIP). Operating temperature range is 0°C to 70°C. High Efficiency: Using Page Mode enables for more efficient data access. Low electricity Consumption: The device is designed to consume as little electricity as possible. High noise immunity ensures data integrity even in electrically loud conditions. Wide Operating Voltage Range: Supports a wide range of input voltages, making it suitable for a variety of applications. 3-State Output: Enables bus-oriented designs while minimizing conflict on shared lines. This DRAM chip is ideal for applications requiring efficient and rapid memory access.