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      SPD03N60C3BTMA1 N-Channel MOSFET, 3.2 A, 650 V CoolMOS C3, 3-Pin DPAK Infineon

      SKU: MOS-0004-G12

      Sold by Select Automation

      Final price R 33.19
      R 28.86 excl. VAT

      Availability: In Stock (4 on hand)

      Short Description
      Description: The CoolMOS, OptiMOS, and StrongIRFET families of MOSFET devices are only a few of the many models that Infineon has to offer.  To increase efficiency, power density, and cost effectiveness, they provide best-in-class performance. Automotive approved MOSFETs that meet AEC-Q101 industry standards are advantageous for designs that demand superior protective features and high quality.
      MOS-0004-G12
      Alternative image 1
      Features: Maximum Continuous Drain Current:3.2 A Maximum Drain Source Voltage:650 V Maximum Drain Source Resistance:3.8 A Maximum Gate Threshold Voltage:3.9V Minimum Gate Threshold Voltage:2.1V Maximum Gate Source Voltage: -30 V, +30 V Maximum Operating Temperature: +150 °C New revolutionary high voltage technology Ultra-low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance

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