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      75G60HD NPN MOSFET Transistor SMD 600V 75A

      SKU: MOS-0072-G13

      Sold by Select Automation

      Final price R 40.32
      R 35.06 excl. VAT

      Availability: In Stock (5 on hand)

      Short Description
      Description: The 75G60HD IGBT transistor is a three-terminal power semiconductor device.  Originally utilized as an electrical switch, it evolved to combine high efficiency and quick switching.  Electronic signals can be switched or amplified by utilizing the conductivity's capacity to change with applied voltage.
      MOS-0072-G13
      Alternative image 1
      Specifications: Type of transistor: IPM. Type: NPN. Mounting: Surface mount. Collector-Emitter voltage: 600V. Gate-Emitter voltage: ±20V. DC Collector Current TC=25°C: 100A. DC Collector Current TC=100°C: 75A. Pulsed Collector Current: 225A. IGBT Max. Power Dissipation TC=25°C: 500W. FWD Max. Power Dissipation TC=25°C: 190W. Operating Junction Temperature: -40 to +175°C. Storage Temperature: -55 to +175°C.

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