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IRFB4110 N-Channel MOSFET Transistor 100V 180A
SKU: MOS-0073-G13
Sold by Select Automation
Final price R 61.24
R 53.25 excl. VAT
Availability: In Stock (27 on hand)
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Short Description
Description:
A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
It is employed for signal amplification or switching.
Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
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Specifications:
Drain-Source Voltage: 100V.
Gate-Source Voltage-Continuous: ±20V.
Drain Current-Continuous: 180A.
Drain Current-Single Pulse: 670A.
Total Dissipation TC=25°C: 370W.
Max. Operating Junction Temperature: 175°C.
Storage Temperature: -55 to 175°C.
Min. Drain-Source Breakdown Voltage: 100V.
Drain-Source On-Resistance: 4.5m Ω.