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      IRFB4110 N-Channel MOSFET Transistor 100V 180A

      SKU: MOS-0073-G13

      Sold by Select Automation

      Final price R 61.24
      R 53.25 excl. VAT

      Availability: In Stock (27 on hand)

      Short Description
      Description: A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.  It is employed for signal amplification or switching.  Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.  In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors). 
      MOS-0073-G13
      Alternative image 1
      Specifications: Drain-Source Voltage: 100V. Gate-Source Voltage-Continuous: ±20V. Drain Current-Continuous: 180A. Drain Current-Single Pulse: 670A. Total Dissipation TC=25°C: 370W. Max. Operating Junction Temperature: 175°C. Storage Temperature: -55 to 175°C. Min. Drain-Source Breakdown Voltage: 100V. Drain-Source On-Resistance: 4.5m Ω.

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