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IRF9540N P-Channel MOSFET TO-220AB 100V 23A 140W
SKU: MOS-0080-F13
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Availability: In Stock (2 on hand)
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Short Description
Description:
A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
It is employed for signal amplification or switching.
Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
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Features:
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Specifications:
Continuous Drain Current TC=25°C: -23A.
Continuous Drain Current TC=100°C: -16A.
Pulsed Drain Current: -76A.
Power Dissipation: 140W.
Gate-to-Source Voltage: ± 20V.
Avalanche Current: -11A.
Operating Junction and Storage Temperature Range: -55 to +175°C.
Soldering Temperature, for 10 seconds: 300°C.
Min. Drain-to-Source Breakdown Voltage: -100V.
Drain-to-Source On-Resistance (Max.): 0.117Ω.
Casing: TO-220AB.