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      IRF9540N P-Channel MOSFET TO-220AB 100V 23A 140W

      SKU: MOS-0080-F13

      Price on request

      Availability: In Stock (2 on hand)

      Short Description
      Description: A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.  It is employed for signal amplification or switching.  Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.  In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
      MOS-0080-F13
      Alternative image 1
      Features: Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Specifications: Continuous Drain Current TC=25°C: -23A. Continuous Drain Current TC=100°C: -16A. Pulsed Drain Current: -76A. Power Dissipation: 140W. Gate-to-Source Voltage: ± 20V. Avalanche Current: -11A. Operating Junction and Storage Temperature Range: -55 to +175°C. Soldering Temperature, for 10 seconds: 300°C. Min. Drain-to-Source Breakdown Voltage: -100V. Drain-to-Source On-Resistance (Max.): 0.117Ω. Casing: TO-220AB.

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