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IRFB3206 N-Channel MOSFET TO-220AB 60V 210A 300W
SKU: MOS-0081-F13
Sold by Select Automation
Final price R 44.16
R 38.40 excl. VAT
Availability: In Stock (10 on hand)
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Short Description
Description:
A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
It is employed for signal amplification or switching.
Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
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Specifications:
Continuous Drain Current TC=25°C (Silicon Limited): 210A.
Continuous Drain Current TC=100°C (Silicon Limited): 150A.
Continuous Drain Current TC=25°C (Wire Bond Limited): 120A.
Pulsed Drain Current: 840A.
Power Dissipation: 300W.
Gate-to-Source Voltage: ± 20V.
Operating Junction and Storage Temperature Range: -55 to +175°C.
Soldering Temperature, for 10 seconds: 300°C.
Min. Drain-to-Source Breakdown Voltage: 60V.
Drain-to-Source On-Resistance (Max.): 3.0m Ω.
Casing: TO-220AB.