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      NGD8201NG N-Channel IGBT MOSFET 400V 20A 369C

      SKU: MOS-0084-F13

      Sold by Select Automation

      Final price R 40.25
      R 35.00 excl. VAT

      Availability: In Stock (7 on hand)

      Short Description
      Description: This Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry with ESD and overvoltage clamping protection for inductive coil driver applications.  Ignition, direct fuel injection, and other applications requiring high voltage and current switching are among the primary uses.
      MOS-0084-F13
      Alternative image 1
      Specifications: Collector-emitter voltage: 440V. Collector-gate voltage: 440V. Gate-emitter voltage: 15V. Collector continuous current: 20A DC. Collector current Pulsed TC=25°C: 50A DC. Continuous gate current: 1.0mA. Transient gate current: 20mA. Power dissipation TC=25°C: 125W. Operating and storage temperature: -55 to +175°C.

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